Inhomogeneous Strain Relaxation and Defect Distribution of Znte Layers Deposited on (100)Gaas by Metalorganic Vapor-Phase Epitaxy
WOS:A1995RE58200032
1995
78
1
229
235
Infm,unita gnsm,i-73100 lecce,italy. ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. cnr,ist mat elettr,i-73100 lecce,italy. univ padua,dipartimento fis g galilei,i-35100 padua,italy. infm,unita gnsm,i-35100 padua,italy. Lovergine, n, univ lecce,dipartimento sci mat,via per arnesano,i-73100 lecce,italy.
ISI Document Delivery No.: RE582
Cited Reference Count: 12
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