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Journal article

Indirect-Gap Alxga1-Xas and Its Similarity to Gap

We report on luminescence, transmission and luminescence excitation measurements on indirect-gap AlxGa1-xAs in the composition range 0.42 less than or equal to x less than or equal to 0.86. The phonon coupling strength in transitions of bound excitons is investigated and found to be dependent on AlAs mole fraction and on the chemical species of the binding impurity. We find binding energy values of 35.5 +/- 5.5 meV for x = 0.42 and 50.0 +/- 5.5 meV for x = 0.86. The recombination of indirect-gap free excitons is strongly influenced by a so-called 'camel's back structure' (Delta = 349 meV, delta = 5.5 meV, xi = 0.092 for x = 0.42) within the lowest conduction band near the zone boundary X. The exciton binding energy amounts to 20 +/- 3 meV, much higher than reported recently in literature, and much higher than computable using a simple hydrogen model for the exciton. Temperature-dependent luminescence measurements-in the temperature range 4.2 K less than or equal to T less than or equal to 300 K-yielded a reliable relation for the temperature dependence of the indirect excitonic gap at an AlAs mole fraction of x = 0.42. From temperature-dependent measurements the binding energy of the sulphur donor was evaluated to be 95 +/- 9 meV in Al0.75Ga0.25As, being representative of AlAs-rich material. This value, more than twice that computable from a simple effective-mass model, has to be seen as a further strong hint at a pronounced anisotropy within the lowest conduction band at the X point of the Brillouin zone. Because the band structure data of AlAs and indirect-gap AlxGa1-xAs are very similar to those of the well known binary compound Gap, we consequently use the detailed knowledge on near-gap electronic states in this material to describe our experimental findings.

    Keywords: INDIRECT EXCITON ; FINE-STRUCTURE ; ALAS

    Note:

    Ecole polytech fed lausanne,phb ecublens,inst phys appl,ch-1015 lausanne,switzerland. Lassen, s, univ leipzig,fak phys & geowissensch,halbleiterphys abt,linnestr 5,d-04103 leipzig,germany.

    ISI Document Delivery No.: RH071

    Times Cited: 2

    Cited Reference Count: 22

    Cited References:

    BOSIO C, 1988, PHYS REV B, V83, P3263

    CAPIZZI M, 1977, SOLID STATE COMMUN, V24, P801

    DAVIES G, 1970, J PHYS CHEM SOLIDS, V31, P883

    DEAN PJ, 1966, PHYS REV, V150, P690

    DINGLE R, 1976, I PHYS C SER A, V33, P210

    DINGLE R, 1979, SOLID STATE COMMUN, V29, P171

    GLASER ER, 1991, PHYS REV B, V43, P14540

    GUERTLER S, 1992, PHYS STATUS SOLIDI B, V173, P441

    GUZZI M, 1992, PHYS REV B, V45, P10951

    HENNING JCM, 1986, J PHYS C SOLID STATE, V19, L335

    HUMPHREYS RG, 1978, PHYS REV B, V18, P5590

    KOPYLOV AA, 1985, SOLID STATE COMMUN, V56, P1

    KUDO K, 1986, J APPL PHYS, V60, P3371

    LORENZ MR, 1970, SOLID STATE COMMUN, V8, P693

    MADELUNG O, 1982, LANDOLTBORNSTEIN NUM

    MADELUNG O, 1987, LANDOLDT BORNSTEIN N

    MORGAN TN, 1968, PHYS REV LETT, V21, P819

    NISHIZAWA J, TR41 RIEC TOH U RES

    PIKHTIN AN, 1977, SOV PHYS SEMICOND, V11, P245

    ROSSLER U, 1979, FESTKORPERPROBLEME, V19, P77

    SCHWABE R, 1978, PHYS STATUS SOLIDI B, V89, P561

    THOMAS DG, 1966, PHYS REV, V150, P680

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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