Site-selective four-wave-mixing experiments in GaAs/(GaAl)As multiple quantum wells
The influence of biexciton formation on the four-wave-mixing response of multiple quantum wells having a strong inhomogeneous broadening of the exciton transitions has been investigated. The experimental results are consistent with a model which distinguishes between crystal regions where the exciton energy is almost constant over the spatial extension of the biexciton state, and regions where the fluctuations of the exciton energy are comparable to or larger than the biexciton binding energy.
WOS:A1995UB29400022
1995
17
11-12
1377
1382
Ecole polytech fed lausanne,phb ecublens,inst phys appl,ch-1015 lausanne,switzerland. Bongiovanni, G, UNIV CAGLIARI,DIPARTIMENTO SCI FIS,VIA OSPED 72,I-09124 CAGLIARI,ITALY.
ISI Document Delivery No.: UB294
Cited Reference Count: 9
Cited References:
BARAD S, 1992, PHYS REV LETT, V68, P349
BIGOT JY, 1993, PHYS REV LETT, V71, P1820
ERLAND J, 1994, PHYS REV B, V50, P15047
FINKELSTEIN G, 1993, PHYS REV B, V47, P12965
GAMMON D, 1991, PHYS REV LETT, V67, P1547
KOCH M, 1992, PHYS REV LETT, V69, P3631
MAYER EJ, 1995, PHYS REV B, V51, P10909
YAJIMA T, 1979, J PHYS SOC JPN, V47, P620
ZIMMERMANN R, 1992, PHYS STATUS SOLIDI B, V173, P129
REVIEWED