We investigated the optical properties of excitons in quasi-one-dimensional semiconductor quantum structures by photoluminescence and photoluminescence excitation: High-quality GaAs/AlxGa1-xAs heterostructures were grown using low-pressure organometallic chemical vapour deposition (OMCVD) on non-planar substrates. The experimentally observed subband separations are in good agreement with a theoretical calculation of the quantum-confined eigenstates, which includes the mapping of the crescent-shaped wire obtained on TEM micrographs. Additionally, a temperature dependence study of excitonic spectra reveals the dominant role of potential and size fluctuations in localizing the excitons.
Titre
Optical spectroscopy of semiconductor quantum wires
Publié dans
Nuovo Cimento Della Societa Italiana Di Fisica D-Condensed Matter Atomic Molecular and Chemical Physics Fluids Plasmas Biophysics
Volume
17
Numéro
11-12
Pages
1641-1650
Date
1995
ISSN
0392-6737
Note
Oberli, DY, ECOLE POLYTECH FED LAUSANNE,DEPT PHYS,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: UB294
Cited Reference Count: 10
Cited References:
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Date de création de la notice
2007-08-31
