Optical study on ultrathin InAs/InP single quantum wells
Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.
WOS:A1995UB29400020
1995
17
11-12
1367
1370
Ecole normale super lyon, cecam, f-69364 lyon 07, france. univ pavia, ist fis a volta, i-27100 pavia, italy. ecole polytech fed lausanne, phb ecublens, inst micro & optoelectr, ch-1015 lausanne, switzerland. Bitz, A, ECOLE POLYTECH FED LAUSANNE, PHB ECUBLENS, INST PHYS APPL, CH-1015 LAUSANNE, SWITZERLAND.
ISI Document Delivery No.: UB294
Cited Reference Count: 13
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