Journal article

Improvement of Crystal Quality of Epitaxial Silicon-Germanium Alloy Layers by Carbon Additions

Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three dimensional growth.

    Keywords: GROWTH


    Insa,phys matiere lab,f-69621 villeurbanne,france. Mi, j, epfl,inst micro & optoelectr,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: NN693

    Times Cited: 0

    Cited Reference Count: 5

    Cited References:

    COPEL M, 1989, PHYS REV LETT, V63, P632

    EBERL K, 1992, APPL PHYS LETT, V60, P3033

    IM S, 1993, APPL PHYS LETT, V63, P929

    STINESPRING CD, 1989, J APPL PHYS, V65, P173

    STRANE JW, 1993, APPL PHYS LETT, V63, P2786


    Record created on 2007-08-31, modified on 2017-05-12


  • There is no available fulltext. Please contact the lab or the authors.

Related material