Improvement of Crystal Quality of Epitaxial Silicon-Germanium Alloy Layers by Carbon Additions

Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three dimensional growth.


Published in:
Helvetica Physica Acta, 67, 2, 219-220
Year:
1994
ISSN:
0018-0238
Keywords:
Note:
Insa,phys matiere lab,f-69621 villeurbanne,france. Mi, j, epfl,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: NN693
Times Cited: 0
Cited Reference Count: 5
Cited References:
COPEL M, 1989, PHYS REV LETT, V63, P632
EBERL K, 1992, APPL PHYS LETT, V60, P3033
IM S, 1993, APPL PHYS LETT, V63, P929
STINESPRING CD, 1989, J APPL PHYS, V65, P173
STRANE JW, 1993, APPL PHYS LETT, V63, P2786
Laboratories:




 Record created 2007-08-31, last modified 2018-03-17


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