Improvement of Crystal Quality of Epitaxial Silicon-Germanium Alloy Layers by Carbon Additions
Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three dimensional growth.
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Insa,phys matiere lab,f-69621 villeurbanne,france. Mi, j, epfl,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: NN693
Times Cited: 0
Cited Reference Count: 5
COPEL M, 1989, PHYS REV LETT, V63, P632
EBERL K, 1992, APPL PHYS LETT, V60, P3033
IM S, 1993, APPL PHYS LETT, V63, P929
STINESPRING CD, 1989, J APPL PHYS, V65, P173
STRANE JW, 1993, APPL PHYS LETT, V63, P2786
Record created on 2007-08-31, modified on 2016-08-08