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research article
Improvement of Crystal Quality of Epitaxial Silicon-Germanium Alloy Layers by Carbon Additions
Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three dimensional growth.
Type
research article
Web of Science ID
WOS:A1994NN69300014
Authors
Mi, J.
•
Letourneau, P.
•
•
Gailhanou, M.
•
Dutoit, M.
•
Dubois, C.
•
Dupuy, J. C.
•
Bremond, G.
Publication date
1994
Published in
Volume
67
Issue
2
Start page
219
End page
220
Subjects
Note
Insa,phys matiere lab,f-69621 villeurbanne,france. Mi, j, epfl,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: NN693
Cited Reference Count: 5
Cited References:
COPEL M, 1989, PHYS REV LETT, V63, P632
EBERL K, 1992, APPL PHYS LETT, V60, P3033
IM S, 1993, APPL PHYS LETT, V63, P929
STINESPRING CD, 1989, J APPL PHYS, V65, P173
STRANE JW, 1993, APPL PHYS LETT, V63, P2786
Peer reviewed
REVIEWED
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Available on Infoscience
August 31, 2007
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