High-reflectance GaInP/GaAs distributed Bragg reflector
A high-reflectance GaInP/GaAs distributed Bragg reflector (DBR) was grown by chemical beam epitaxy (CBE). The mirror consists of 40 pairs of alternating layers and was designed for a centre wavelength of 980 nm, resulting in a total thickness of 5.8 mum. Highly stable growth conditions led to a maximum reflectance of 0.99 and to a variation in the centre wavelength of only 5 nm over the 2'' (50.8 mm) wafer. Transmission electron microscopy and X-ray diffraction measurements confirmed the vertical uniformity and the crystallographic quality of the sample.
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Saintcricq, B., Rudra, A., Ganiere, J. D., & Ilegems, M. (1993). High-reflectance GaInP/GaAs distributed Bragg reflector. Electronics Letters, 29(21), 1854–1855. https://doi.org/10.1049/el:19931234
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WOS:A1993NE96700032
1993
29
21
1854
1855
Saintcricq, b, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: NE967
Cited Reference Count: 10
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