High-Reflectance Gainp/Gaas Distributed-Bragg-Reflector

A high-reflectance GaInP/GaAs distributed Bragg reflector (DBR) was grown by chemical beam epitaxy (CBE). The mirror consists of 40 pairs of alternating layers and was designed for a centre wavelength of 980 nm, resulting in a total thickness of 5.8 mum. Highly stable growth conditions led to a maximum reflectance of 0.99 and to a variation in the centre wavelength of only 5 nm over the 2'' (50.8 mm) wafer. Transmission electron microscopy and X-ray diffraction measurements confirmed the vertical uniformity and the crystallographic quality of the sample.


Published in:
Electronics Letters, 29, 21, 1854-1855
Year:
1993
ISSN:
0013-5194
Keywords:
Note:
Saintcricq, b, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: NE967
Times Cited: 6
Cited Reference Count: 10
Cited References:
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SAKA T, 1993, J APPL PHYS, V73, P380
TANAKA H, 1986, J APPL PHYS, V59, P985
VONLEHMEN A, 1992, ELECTRON LETT, V28, P21
Laboratories:




 Record created 2007-08-31, last modified 2018-03-17


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