A high-reflectance GaInP/GaAs distributed Bragg reflector (DBR) was grown by chemical beam epitaxy (CBE). The mirror consists of 40 pairs of alternating layers and was designed for a centre wavelength of 980 nm, resulting in a total thickness of 5.8 mum. Highly stable growth conditions led to a maximum reflectance of 0.99 and to a variation in the centre wavelength of only 5 nm over the 2'' (50.8 mm) wafer. Transmission electron microscopy and X-ray diffraction measurements confirmed the vertical uniformity and the crystallographic quality of the sample.
Title
High-reflectance GaInP/GaAs distributed Bragg reflector
Published in
Electronics Letters
Volume
29
Issue
21
Pages
1854-1855
Date
1993
ISSN
0013-5194
Note
Saintcricq, b, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: NE967
Cited Reference Count: 10
Cited References:
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MACLEOD HA, 1986, THIN FILM OPTICAL FI
MOBARHAN K, 1992, ELECTRON LETT, V28, P1510
PESSA M, 1993, MAY P E MRS SPRING M
RUDRA A, 1992, J CRYST GROWTH, V120, P338
SAKA T, 1993, J APPL PHYS, V73, P380
TANAKA H, 1986, J APPL PHYS, V59, P985
VONLEHMEN A, 1992, ELECTRON LETT, V28, P21
Record creation date
2007-08-31
