Growth and Characterization of Gaalas Gaas and Gainas Inp Structures - the Effect of a Pulse Metalorganic Flow

GaAlAs/GaAs and GaInAs/InP thick layers, single and multiple quantum wells were grown by atmospheric pressure metalorganic vapor phase epitaxy. Auger electron spectroscopy, wedge transmission electron microscopy, x-ray diffraction, low-temperature photoluminescence, and scanning electron microscopy were used to analyze the crystal quality. These analysis techniques show that layers grown using high vapor pressure metalorganic sources present fluctuations in the ternary alloy composition. We propose that these fluctuations are due to the pulse character of the high vapor pressure metalorganic flow. Bubbling experiments were performed to show the relationship between ternary layer composition fluctuation and the pulse character of the metalorganic flow. High vapor pressure metalorganic source like trimethylgallium presents tens of Angstroms growth rate per pulse or bubble whereas a low vapor pressure source like triethylgallium presents few Angstroms growth rate per bubble.


Published in:
Journal of Applied Physics, 71, 1, 179-186
Year:
1992
ISSN:
0021-8979
Keywords:
Note:
Unicamp,inst fis,br-13081 campinas,sp,brazil. ecole polytech fed lausanne,dept phys,ch-1015 lausanne,switzerland. ctr natl etud telecommun,f-92220 bagneux,france. Sacilotti, m, cpqd telebras,caixa postal 1579,br-13083 campinas,sp,brazil.
ISI Document Delivery No.: GX655
Times Cited: 8
Cited Reference Count: 40
Cited References:
1986, ALFA VENTRON CATALOG
BERTOLET DC, 1987, J APPL PHYS, V62, P120
BOEGLIN H, 1990, MICROELECTRONIC MANU, V13, P23
CHANG CY, 1981, J CRYST GROWTH, V55, P24
CHEN YJ, 1987, P SPIE, V792, P162
CHOW R, 1983, APPL PHYS LETT, V42, P383
CUNNINGHAM JE, 1988, APPL PHYS LETT, V53, P1285
DEVEAUD B, 1986, J APPL PHYS, V59, P1633
ENGLISH JH, 1987, APPL PHYS LETT, V50, P1826
ESAKI L, 1986, IEEE J QUANTUM ELECT, V22, P1611
FAIST J, 1989, J APPL PHYS, V66, P1023
FRIJLINK PM, 1988, J CRYST GROWTH, V93, P207
FUKUI T, 1988, JPN J APPL PHYS 2, V27, L1320
GAINES JM, 1988, J VAC SCI TECHNOL B, V6, P1378
GANIERE JD, 1989, J MICROSC SPECTROSC, V14, P407
HERSEE SD, 1990, J VAC SCI TECHNOL A, V8, P800
KAWAGUCHI Y, 1986, I PHYS C SER, V79, P79
KAWAI H, 1984, J APPL PHYS, V56, P463
KUECH TF, 1986, J CRYST GROWTH, V77, P257
LAUBE G, 1988, J CRYST GROWTH, V93, P45
LEYS MR, 1984, J CRYST GROWTH, V68, P431
MIRCEA A, 1986, J CRYST GROWTH, V77, P340
MOSS RH, 1984, J CRYST GROWTH, V68, P78
NICHOLAS DJ, 1987, I PHYS C SER, V91, P295
OGALE SB, 1987, PHYS REV B, V36, P1662
RAZEGHI M, 1983, J ELECTRON MATER, V12, P371
RAZEGHI M, 1989, APPL PHYS LETT, V55, P1677
SACILOTTI M, 1989, REV BRAS FIS, V4, P189
SASAKI H, 1985, JPN J APPL PHYS, V24, L417
SCHAUS CF, 1986, J APPL PHYS, V59, P678
SHAYEGAN M, 1988, APPL PHYS LETT, V52, P1086
SILLMON RS, 1986, J CRYST GROWTH, V77, P73
SMEETS ETJ, 1986, J CRYST GROWTH, V77, P347
TANAKA M, 1986, SURF SCI, V174, P65
TANAKA M, 1987, J CRYST GROWTH, V81, P153
THRUSH EJ, 1984, J CRYST GROWTH, V68, P412
TSANG WT, 1986, APPL PHYS LETT, V49, P960
TSUI RK, 1986, APPL PHYS LETT, V48, P940
TU CW, 1987, J CRYST GROWTH, V81, P159
WELCH DF, 1985, APPL PHYS LETT, V46, P991
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