Infoscience

Journal article

All-Optical Reflectivity Tuning and Logic Gating in a GaAs/AlAs Periodic Layered Structure

The optical nonlinearity of a GaAs/AlAs periodic layered structure was experimentally investigated for the first time. The shift of the reflectivity peak with increasing intensity was observed. A reflectivity contrast of about 10:1 was obtained by varying the incident intensity. Hysteresis loops due to the response delay of both the electronic and the thermal nonlinearity were observed. All-optical logic operations were also demonstrated. A further improvement of the structure may lead to a new type of optical bistable device.

    Keywords: BISTABILITY ; ETALONS ; SEMICONDUCTORS

    Note:

    Univ neuchatel,inst microtechnol,ch-2000 neuchatel,switzerland. ecole polytech fed lausanne,ch-1015 lausanne,switzerland. bell no res,ottawa k1y 4h7,ontario,canada. Cada, m, tech univ nova scotia,dept elect engn,pob 1000,halifax b3j 2x4,ns,canada.

    ISI Document Delivery No.: HB055

    Times Cited: 31

    Cited Reference Count: 17

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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