Bulk GaAlAs Mirror as a Saturable Absorber for Subpicosecond Pulse Generation around 835 Nm
We report on a bulk GaAlAs mirror which is used as a saturable absorber for subpicosecond pulse generation around 835 nm. The mirror consists of a 200 nm layer of bulk GaAlAs (with approximately 5% Al content) which is grown on a linear Bragg mirror and is used as a laser end mirror. The incorporation of the bulk GaAlAs mirror into a synchronously pumped styryl-9 dye laser leads to a significant mode locking improvement and pulse shortening. Optimum operation of the laser is obtained for wavelengths near the room temperature band edge of the GaAlAs material: at 836 nm close to bandwidth limited pulses with a duration of 220 fs are generated.
WOS:A1992HU36800025
1992
89
2-4
245
248
Ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. Bi, jq, univ bern,inst appl phys,sidlerstr 5,ch-3012 bern,switzerland.
ISI Document Delivery No.: HU368
Cited Reference Count: 16
Cited References:
ACKLIN B, 1991, OSA P PHOTONIC SWITC, V8, P231
BEAUD P, 1990, OPT COMMUN, V80, P31
BI JQ, 1991, OPT COMMUN, V81, P408
CESAR CL, 1990, OPT LETT, V15, P1147
DELFYETT PJ, 1990, OPT LETT, V15, P1371
FELDMANN J, 1991, OPT LETT, V16, P241
HAUS HA, 1985, J OPT SOC AM B, V2, P1237
HAUS HA, 1991, J OPT SOC AM B, V8, P1252
ISLAM MN, 1989, APPL PHYS LETT, V54, P1203
ISLAM MN, 1989, IEEE J QUANTUM ELECT, V25, P2454
JIANG WB, 1991, OPT LETT, V16, P1165
KELLER U, 1990, OPT LETT, V15, P1377
KELLER U, 1991, OPT LETT, V16, P390
SILBERBERG Y, 1984, OPT LETT, V9, P507
SOCCOLICH CE, 1990, APPL PHYS LETT, V56, P2177
ZYSSET B, 1986, OPT LETT, V11, P156
REVIEWED
EPFL