Indirect-Energy-Gap Dependence on Al Concentration in Alxga1-Xas Alloys
The energy of the indirect X exciton in AlxGa1-xAs epitaxial layers (with 0.38 < x < 0.81) has been determined by photoluminescence measurements at a sample temperature of 12 K; from these data, the dependence on the Al concentration x of the energy of the GAMMA-X gap has been obtained: E(g)X(x) = 1.988 + 0.207x + 0.055x2 eV. This relation is characterized by a very small bowing. From our data we deduce also the coordinates of the GAMMA-X crossover point: x(c) = 0.385 +/- 0.016 and E(c) = 2076 +/- 4 meV at T = 0 K and x(c) = 0.396 +/- 0.016 and E(c) = 1997 +/- 4 meV at T = 300 K.
WOS:A1992HU79900013
1992
45
19
10951
10957
Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. univ pavia,dipartimento fis,i-27100 pavia,italy. univ trento,dipartimento fis,i-38050 trent,italy. Guzzi, m, univ milan,dipartimento fis,via celoria 16,i-20133 milan,italy.
ISI Document Delivery No.: HU799
Cited Reference Count: 36
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