Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe
We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.
WOS:A1992HW83500058
1992
120
1-4
338
342
Ecole polytech fed lausanne,inst appl phys,dept phys,ch-1015 lausanne,switzerland. Rudra, a, ecole polytech fed lausanne,inst micro & optoelectr,dept phys,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HW835
Cited Reference Count: 16
Cited References:
BENCHIMOL JL, 1991, J CRYST GROWTH, V107, P978
CARLIN JF, 1992, J CRYST GROWTH, V120, P155
DAVIES GJ, 1991, J CRYST GROWTH, V107, P999
GAILHANOU M, 1989, 19TH P EUR SOL STAT, P495
HAUSSER S, 1990, APPL PHYS LETT, V56, P913
HEINECKE H, 1990, ELECTRON LETT, V26, P213
HEINECKE H, 1991, J CRYST GROWTH, V107, P1062
KAWAGUCHI Y, 1986, 18TH C SOL STAT DEV, P619
LAMBERT M, 1990, J CRYST GROWTH, V105, P213
PERALES A, 1990, ELECTRON LETT, V26, P237
RUDRA A, 1991, J CRYST GROWTH, V111, P589
STANLEY CR, 1991, 6TH EUR C MOL BEAM E
THIJS PJA, 1990, 12TH IEEE INT SEM LA, P3
TSANG WT, 1986, APPL PHYS LETT, V49, P221
TSANG WT, 1991, APPL PHYS LETT, V58, P2610
YAMADA T, 1992, J CRYST GROWTH, V120, P177
REVIEWED