Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe

We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.


Published in:
Journal of Crystal Growth, 120, 1-4, 338-342
Year:
1992
ISSN:
0022-0248
Note:
Ecole polytech fed lausanne,inst appl phys,dept phys,ch-1015 lausanne,switzerland. Rudra, a, ecole polytech fed lausanne,inst micro & optoelectr,dept phys,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HW835
Times Cited: 17
Cited Reference Count: 16
Cited References:
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