Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe
1992
Abstract
We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.
Details
Title
Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe
Author(s)
Rudra, A. ; Carlin, J. F. ; Ruterana, P. ; Gailhanou, M. ; Staehli, J. L. ; Ilegems, M.
Published in
Journal of Crystal Growth
Volume
120
Issue
1-4
Pages
338-342
Date
1992
ISSN
0022-0248
Note
Ecole polytech fed lausanne,inst appl phys,dept phys,ch-1015 lausanne,switzerland. Rudra, a, ecole polytech fed lausanne,inst micro & optoelectr,dept phys,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HW835
Cited Reference Count: 16
Cited References:
BENCHIMOL JL, 1991, J CRYST GROWTH, V107, P978
CARLIN JF, 1992, J CRYST GROWTH, V120, P155
DAVIES GJ, 1991, J CRYST GROWTH, V107, P999
GAILHANOU M, 1989, 19TH P EUR SOL STAT, P495
HAUSSER S, 1990, APPL PHYS LETT, V56, P913
HEINECKE H, 1990, ELECTRON LETT, V26, P213
HEINECKE H, 1991, J CRYST GROWTH, V107, P1062
KAWAGUCHI Y, 1986, 18TH C SOL STAT DEV, P619
LAMBERT M, 1990, J CRYST GROWTH, V105, P213
PERALES A, 1990, ELECTRON LETT, V26, P237
RUDRA A, 1991, J CRYST GROWTH, V111, P589
STANLEY CR, 1991, 6TH EUR C MOL BEAM E
THIJS PJA, 1990, 12TH IEEE INT SEM LA, P3
TSANG WT, 1986, APPL PHYS LETT, V49, P221
TSANG WT, 1991, APPL PHYS LETT, V58, P2610
YAMADA T, 1992, J CRYST GROWTH, V120, P177
ISI Document Delivery No.: HW835
Cited Reference Count: 16
Cited References:
BENCHIMOL JL, 1991, J CRYST GROWTH, V107, P978
CARLIN JF, 1992, J CRYST GROWTH, V120, P155
DAVIES GJ, 1991, J CRYST GROWTH, V107, P999
GAILHANOU M, 1989, 19TH P EUR SOL STAT, P495
HAUSSER S, 1990, APPL PHYS LETT, V56, P913
HEINECKE H, 1990, ELECTRON LETT, V26, P213
HEINECKE H, 1991, J CRYST GROWTH, V107, P1062
KAWAGUCHI Y, 1986, 18TH C SOL STAT DEV, P619
LAMBERT M, 1990, J CRYST GROWTH, V105, P213
PERALES A, 1990, ELECTRON LETT, V26, P237
RUDRA A, 1991, J CRYST GROWTH, V111, P589
STANLEY CR, 1991, 6TH EUR C MOL BEAM E
THIJS PJA, 1990, 12TH IEEE INT SEM LA, P3
TSANG WT, 1986, APPL PHYS LETT, V49, P221
TSANG WT, 1991, APPL PHYS LETT, V58, P2610
YAMADA T, 1992, J CRYST GROWTH, V120, P177
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Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Scientific production and competences > SB - School of Basic Sciences > CIME - Interdisciplinary Center for Electron Microscopy
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Work produced at EPFL
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Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Scientific production and competences > SB - School of Basic Sciences > CIME - Interdisciplinary Center for Electron Microscopy
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2007-08-31