We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.