Infoscience

Journal article

Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe

We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.

    Note:

    Ecole polytech fed lausanne,inst appl phys,dept phys,ch-1015 lausanne,switzerland. Rudra, a, ecole polytech fed lausanne,inst micro & optoelectr,dept phys,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: HW835

    Times Cited: 17

    Cited Reference Count: 16

    Cited References:

    BENCHIMOL JL, 1991, J CRYST GROWTH, V107, P978

    CARLIN JF, 1992, J CRYST GROWTH, V120, P155

    DAVIES GJ, 1991, J CRYST GROWTH, V107, P999

    GAILHANOU M, 1989, 19TH P EUR SOL STAT, P495

    HAUSSER S, 1990, APPL PHYS LETT, V56, P913

    HEINECKE H, 1990, ELECTRON LETT, V26, P213

    HEINECKE H, 1991, J CRYST GROWTH, V107, P1062

    KAWAGUCHI Y, 1986, 18TH C SOL STAT DEV, P619

    LAMBERT M, 1990, J CRYST GROWTH, V105, P213

    PERALES A, 1990, ELECTRON LETT, V26, P237

    RUDRA A, 1991, J CRYST GROWTH, V111, P589

    STANLEY CR, 1991, 6TH EUR C MOL BEAM E

    THIJS PJA, 1990, 12TH IEEE INT SEM LA, P3

    TSANG WT, 1986, APPL PHYS LETT, V49, P221

    TSANG WT, 1991, APPL PHYS LETT, V58, P2610

    YAMADA T, 1992, J CRYST GROWTH, V120, P177

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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