Density Dependence of Electron-Hole Plasma Lifetime in Semiconductor Quantum-Wells

We report on an investigation of the electron-hole (e-h) plasma decay time tau(tot) versus e-h pair density in semiconductor quantum wells. We determine the density reached in a steady-state photoluminescence experiment from the optical spectra and compare it with the e-h pair generation rate. We find that in our samples only radiative e-h recombination is important, and that nonradiative processes and plasma expansion have negligible effects on tau(tot). At plasma densities larger than 5 x 10(12) cm-2, we observe a strong nonlinear reduction of the e-h capture rate into the quantum wells.


Published in:
Physical Review B, 46, 15, 9861-9864
Year:
1992
ISSN:
0163-1829
Keywords:
Note:
Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Bongiovanni, g, univ cagliari,dipartimento sci fis,via osped 72,i-09124 cagliari,italy.
ISI Document Delivery No.: JV112
Times Cited: 12
Cited Reference Count: 23
Cited References:
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