Infoscience

Journal article

Density Dependence of Electron-Hole Plasma Lifetime in Semiconductor Quantum-Wells

We report on an investigation of the electron-hole (e-h) plasma decay time tau(tot) versus e-h pair density in semiconductor quantum wells. We determine the density reached in a steady-state photoluminescence experiment from the optical spectra and compare it with the e-h pair generation rate. We find that in our samples only radiative e-h recombination is important, and that nonradiative processes and plasma expansion have negligible effects on tau(tot). At plasma densities larger than 5 x 10(12) cm-2, we observe a strong nonlinear reduction of the e-h capture rate into the quantum wells.

    Keywords: DIRECT-GAP SEMICONDUCTORS ; TIME-RESOLVED RAMAN ; OPTICAL-PROPERTIES ; K-SELECTION ; EXPANSION ; RENORMALIZATION ; RECOMBINATION ; TRANSPORT ; GAAS ; SI

    Note:

    Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Bongiovanni, g, univ cagliari,dipartimento sci fis,via osped 72,i-09124 cagliari,italy.

    ISI Document Delivery No.: JV112

    Times Cited: 12

    Cited Reference Count: 23

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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