Characterization of nearly ideal Schottky contacts on n-doped AlInAs usable for high performance AlInAs/GaInAs/InP MODFET applications


Presented at:
1st International Semiconductor Device Research Symposium
Year:
1991
Laboratories:




 Record created 2007-08-31, last modified 2018-03-18


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)