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research article
Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy
We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their formation is characterized by a two to three dimensional transition of the reflection high-energy electron diffraction pattern and multiple-lines photoluminescence spectra. An increase of a short range roughness at the InP-InAs interface due to As2 annealing of InP is also observed.
Type
research article
Web of Science ID
WOS:A1991GT01700033
Authors
Publication date
1991
Published in
Volume
59
Issue
23
Start page
3018
End page
3020
Subjects
Peer reviewed
REVIEWED
Available on Infoscience
August 31, 2007
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