Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy

We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their formation is characterized by a two to three dimensional transition of the reflection high-energy electron diffraction pattern and multiple-lines photoluminescence spectra. An increase of a short range roughness at the InP-InAs interface due to As2 annealing of InP is also observed.


Published in:
Applied Physics Letters, 59, 23, 3018-3020
Year:
1991
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2007-08-31, last modified 2018-03-18


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