Infoscience

Journal article

Growth of Gainas by Chemical Beam Epitaxy

    Keywords: CRYSTALLOGRAPHIC PROPERTIES ; X-RAY ; INP ; INGAAS

    Note:

    Ecole polytech fed lausanne,inst appl phys,dept phys,ch-1015 lausanne,switzerland. Carlin, jf, ecole polytech fed lausanne,inst micro & optoelectr,dept phys,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: EY072

    Times Cited: 10

    Cited Reference Count: 11

    Cited References:

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    BASSIGNANA IC, 1989, J APPL PHYS, V65, P4299

    FERRARI C, 1988, J APPL PHYS, V63, P2628

    GOETZ KH, 1983, J APPL PHYS, V54, P4543

    HALLIWELL MAG, 1984, J CRYST GROWTH, V68, P523

    KAWAGUCHI Y, 1986, 18TH C SOL STAT DEV, P619

    MACRANDER AT, 1987, J ELECTROCHEM SOC, V134, P1248

    MATSUI Y, 1985, J VAC SCI TECHNOL B, V3, P528

    RAZEGHI M, 1989, MOCVD CHALLENGE, V1

    TSANG WT, 1986, APPL PHYS LETT, V49, P170

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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