Growth of Gainas by Chemical Beam Epitaxy


Published in:
Journal of Crystal Growth, 107, 1-4, 1057-1059
Year:
1991
ISSN:
0022-0248
Keywords:
Note:
Ecole polytech fed lausanne,inst appl phys,dept phys,ch-1015 lausanne,switzerland. Carlin, jf, ecole polytech fed lausanne,inst micro & optoelectr,dept phys,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: EY072
Times Cited: 10
Cited Reference Count: 11
Cited References:
ASONEN H, 1990, J CRYST GROWTH, V105, P101
BASS SJ, 1986, J CRYST GROWTH, V79, P378
BASSIGNANA IC, 1989, J APPL PHYS, V65, P4299
FERRARI C, 1988, J APPL PHYS, V63, P2628
GOETZ KH, 1983, J APPL PHYS, V54, P4543
HALLIWELL MAG, 1984, J CRYST GROWTH, V68, P523
KAWAGUCHI Y, 1986, 18TH C SOL STAT DEV, P619
MACRANDER AT, 1987, J ELECTROCHEM SOC, V134, P1248
MATSUI Y, 1985, J VAC SCI TECHNOL B, V3, P528
RAZEGHI M, 1989, MOCVD CHALLENGE, V1
TSANG WT, 1986, APPL PHYS LETT, V49, P170
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