Zinc Diffusion in Gaas and Zinc-Induced Disordering of Gaas Algaas Multiple Quantum-Wells - a Multitechnique Study
A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were investigated by secondary-ion mass spectroscopy (SIMS), different imaging modes of scanning electron microscopy such as secondary electrons, cathodoluminescence (CL) and electron beam-induced current (EBIC), transmission electron microscopy on a wedge-shaped specimen (WTEM) and by photoluminescence (PL). A nonexponential decay of the low-temperature EBIC signal accompanied by a very low CL signal due to the high density of nonradiative recombination centres were observed in the diffused region of the n-doped GaAs. Indeed, PL measurements demonstrate that Ga vacancies play a key role on the mechanism of the Zn diffusion. On the impurity-induced disordered (IID) MQW samples, an enrichment of Al at the surface was observed by SIMS and confirmed by WTEM and PL. Low-temperature PL spectra show the gradual disappearance of the MQW excitonic transitions as the number of disordered layers increases. When all of the MQW structure is destroyed, the band-to-band recombinations in the IID produced alloy dominate the PL spectrum.
WOS:A1991GD23900003
1991
23
7
S789
S804
Swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland. swiss fed inst technol,inst electron microscopy,ch-1015 lausanne,switzerland. univ lausanne,inst exptl phys,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: GD239
Cited Reference Count: 30
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