Zinc Diffusion in Gaas and Zinc-Induced Disordering of Gaas Algaas Multiple Quantum-Wells - a Multitechnique Study
A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were investigated by secondary-ion mass spectroscopy (SIMS), different imaging modes of scanning electron microscopy such as secondary electrons, cathodoluminescence (CL) and electron beam-induced current (EBIC), transmission electron microscopy on a wedge-shaped specimen (WTEM) and by photoluminescence (PL). A nonexponential decay of the low-temperature EBIC signal accompanied by a very low CL signal due to the high density of nonradiative recombination centres were observed in the diffused region of the n-doped GaAs. Indeed, PL measurements demonstrate that Ga vacancies play a key role on the mechanism of the Zn diffusion. On the impurity-induced disordered (IID) MQW samples, an enrichment of Al at the surface was observed by SIMS and confirmed by WTEM and PL. Low-temperature PL spectra show the gradual disappearance of the MQW excitonic transitions as the number of disordered layers increases. When all of the MQW structure is destroyed, the band-to-band recombinations in the IID produced alloy dominate the PL spectrum.
WOS:A1991GD23900003
1991
23
7
S789
S804
Swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland. swiss fed inst technol,inst electron microscopy,ch-1015 lausanne,switzerland. univ lausanne,inst exptl phys,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: GD239
Cited Reference Count: 30
Cited References:
ARAUJO D, IN PRESS
BAJAJ KK, 1986, SOLID ST ELECTRON, V49, P215
BORGHS G, 1989, J APPL PHYS, V66, P4381
BRIDGES F, 1990, J PHYS C SOLID STATE, V2, P2975
BURNHAM RD, 1986, I PHYS C SER, V83, P9
CHIANG SY, 1975, J LUMIN, V10, P313
COHEN RM, 1990, J APPL PHYS, V67, P7268
DEAN PJ, 1982, PROG CRYST GROWTH CH, V5, P89
DEPPE DG, 1988, J APPL PHYS, V64, R93
GANIERE JD, 1989, J MICROSC SPECTROSC, V14, P407
GOSELE U, 1981, J APPL PHYS, V52, P4617
HARRISON I, 1989, SEMICOND SCI TECH, V4, P841
HAUFE A, 1988, J PHYS C SOLID STATE, V21, P2951
HWANG CJ, 1969, J APPL PHYS, V40, P4584
HWANG CJ, 1969, J APPL PHYS, V40, P4591
HWANG CJ, 1969, PHYS REV, V180, P827
KY NH, 1991, J APPL PHYS, V69
LAIDIG WD, 1981, APPL PHYS LETT, V38, P776
LEAMY HJ, 1982, J APPL PHYS, V53, R51
LEE JW, 1984, J ELECTRON MATER, V13, P147
LONGINI RL, 1962, SOLID STATE ELECTRON, V5, P127
PANKOVE JI, 1975, OPTICAL PROCESSES SE, CH6
PAVESI L, 1989, HELV PHYS ACTA, V62, P278
PEARAH PJ, 1985, APPL PHYS LETT, V47, P166
QUINTANA V, 1988, J APPL PHYS, V63, P2454
TAN TY, 1987, J APPL PHYS, V61, P1841
TAN TY, 1988, APPL PHYS LETT, V52, P1240
TUCK B, 1988, ATOMIC DIFFUSION 3 5
WILLIAMS EW, 1972, SEMICONDUCTORS SEMIM, V8
XU HQ, 1990, PHYS REV B, V41, P5979
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