Infoscience

Journal article

Cathodoluminescence Study of Oval Defects on Qw Structures

We report a cathodoluminescence (CL) study at helium temperature of oval defects on quantum well (QW) structures grown by molecular beam epitaxy (MBE). We collected the luminescence emitted both from the facet shaped defect and from the defect free growth region. By comparing the experimental CL peak position with the numerically estimated values, we determined the Al concentration and the thicknesses of the layers in the defect area.

    Keywords: MOLECULAR-BEAM EPITAXY ; ELECTRON-MICROSCOPY ; GAAS

    Note:

    Araujo, d, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: HJ307

    Times Cited: 0

    Cited Reference Count: 8

    Cited References:

    DAWERITZ L, 1984, THIN SOLID FILMS, V116, P165

    FUJIWARA K, 1987, J CRYST GROWTH, V80, P104

    HOLLAN L, 1972, J CRYST GR, V13, P319

    KAKIBAYASHI H, 1984, JPN J APPL PHYS, V23, L846

    KAMON K, 1987, J CRYST GROWTH, V84, P126

    PAPADOPOULO AC, 1988, APPL PHYS LETT, V52, P224

    SUZUKI Y, 1984, JPN J APPL PHYS PT 1, V23, P164

    ZANDBERGEN HW, 1987, J CRYST GROWTH, V84, P476

    Reference

    • LOEQ-ARTICLE-1991-002

    Record created on 2007-08-31, modified on 2016-08-08

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