Cathodoluminescence Study of Oval Defects on Qw Structures

We report a cathodoluminescence (CL) study at helium temperature of oval defects on quantum well (QW) structures grown by molecular beam epitaxy (MBE). We collected the luminescence emitted both from the facet shaped defect and from the defect free growth region. By comparing the experimental CL peak position with the numerically estimated values, we determined the Al concentration and the thicknesses of the layers in the defect area.


Published in:
Institute of Physics Conference Series, 117, 703-706
Year:
1991
ISSN:
0951-3248
Keywords:
Note:
Araujo, d, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HJ307
Times Cited: 0
Cited Reference Count: 8
Cited References:
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SUZUKI Y, 1984, JPN J APPL PHYS PT 1, V23, P164
ZANDBERGEN HW, 1987, J CRYST GROWTH, V84, P476
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 Record created 2007-08-31, last modified 2018-03-18


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