Cathodoluminescence Study of Oval Defects on Qw Structures
We report a cathodoluminescence (CL) study at helium temperature of oval defects on quantum well (QW) structures grown by molecular beam epitaxy (MBE). We collected the luminescence emitted both from the facet shaped defect and from the defect free growth region. By comparing the experimental CL peak position with the numerically estimated values, we determined the Al concentration and the thicknesses of the layers in the defect area.
Araujo, d, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HJ307
Times Cited: 0
Cited Reference Count: 8
DAWERITZ L, 1984, THIN SOLID FILMS, V116, P165
FUJIWARA K, 1987, J CRYST GROWTH, V80, P104
HOLLAN L, 1972, J CRYST GR, V13, P319
KAKIBAYASHI H, 1984, JPN J APPL PHYS, V23, L846
KAMON K, 1987, J CRYST GROWTH, V84, P126
PAPADOPOULO AC, 1988, APPL PHYS LETT, V52, P224
SUZUKI Y, 1984, JPN J APPL PHYS PT 1, V23, P164
ZANDBERGEN HW, 1987, J CRYST GROWTH, V84, P476
Record created on 2007-08-31, modified on 2016-08-08