conference paper
High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP
1991
Journal of Crystal Growth
Type
conference paper
Web of Science ID
WOS:A1991FT19000086
Author(s)
Date Issued
1991
Published in
Journal of Crystal Growth
Volume
111
Issue
1-4
Start page
470
End page
474
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
Available on Infoscience
August 31, 2007
Use this identifier to reference this record