High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP

• Published in: 6th International Conference on Molecular Beam Epitaxy, vol. 111, p. 470-474
• Series: Journal of Crystal Growth
• Publication date: 1990

Reference

• LOEQ-CONF-1990-003
• View record in Web of Science

Record created on 2007-08-31, modified on 2017-05-12