High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP


Published in:
Journal of Crystal Growth, 111, 1-4, 470-474
Presented at:
6th International Conference on Molecular Beam Epitaxy
Year:
1991
Laboratories:




 Record created 2007-08-31, last modified 2018-03-18


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)