Home > High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP
 

High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP

Gueissaz, F. ; Houdré, R. ; Ilegems, M.

Published in:
Journal of Crystal Growth, 111, 1-4, 470-474
Presented at:
6th International Conference on Molecular Beam Epitaxy
Year:
1991
DOI:
10.1016/0022-0248(91)91022-3
Other identifiers:
View record in Web of Science
Laboratories:
LOEQ
SCI-SB-RH

Record appears in:
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LOEQ - Laboratory of Quantum Optoelectronics
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > SCI-SB-RH - Groupe SCI SB RH
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published



 Record created 2007-08-31, last modified 2018-03-18


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