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  4. High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP
 
conference paper

High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP

Gueissaz, F.
•
Houdré, R.
•
Ilegems, M.  
1991
Journal of Crystal Growth
6th International Conference on Molecular Beam Epitaxy
  • Details
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Type
conference paper
DOI
10.1016/0022-0248(91)91022-3
Web of Science ID

WOS:A1991FT19000086

Author(s)
Gueissaz, F.
Houdré, R.
Ilegems, M.  
Date Issued

1991

Published in
Journal of Crystal Growth
Volume

111

Issue

1-4

Start page

470

End page

474

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOEQ  
SCI-SB-RH  
Event name
6th International Conference on Molecular Beam Epitaxy
Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/11000
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