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conference paper
Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs
2006
IEEE International Electron Device Meeting, IEDM 2006
Type
conference paper
Web of Science ID
WOS:000247357700224
Authors
•
Krummenacher, F.
•
Anghel, C.
•
Gillon, R.
•
Bakeroot, B.
•
•
Publication date
2006
Published in
IEEE International Electron Device Meeting, IEDM 2006
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
May 16, 2007
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