Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator
Dainesi, P.; Moselund, K. E.; Thévenaz, Luc; Ionescu, A. M.
2006

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Abstract

We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices.

Details

Title Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator
Author(s) Dainesi, P. ; Moselund, K. E. ; Thévenaz, Luc ; Ionescu, A. M.
Published in Proceedings of the 2005 Conference on Lasers and Electro-Optics
Volume 1
Pages 110-112
Conference 2005 Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, 2005
Date 2006
Publisher IEEE
Keywords
DOI https://doi.org/10.1109/CLEO.2005.201693
Other identifier(s) View record in Web of Science
Additional link URL
Laboratories THEVE
NANOLAB
SCI-STI-LT
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > SCI-STI-LT - SCI STI LT Group
Scientific production and competences > STI - School of Engineering > STI Archives > THEVE - Thévenaz Group
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2007-05-16

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