Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices.


Published in:
Proceedings of the 2005 Conference on Lasers and Electro-Optics, 1, 110-112
Presented at:
2005 Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, 2005
Year:
2006
Publisher:
IEEE
Keywords:
Laboratories:




 Record created 2007-05-16, last modified 2018-03-18

Publisher's version:
Download fulltextPDF
External link:
Download fulltextURL
Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)