A Physical Analysis of High Voltage MOSFET Capacitance Behaviour
2005
Details
Title
A Physical Analysis of High Voltage MOSFET Capacitance Behaviour
Author(s)
Anghel, C. ; Chauhan, Y. S. ; Hefyene, N. ; Ionescu, A. M.
Published in
IEEE International Symposium on Industrial Electronics
Volume
2
Pages
473-477
Date
2005
Laboratories
NANOLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2007-05-16