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research article
A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism
We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and charges that in turn lead to very simple relationships among the physical quantities. Finally, we emphasize on the link that exists between this approach and the EKV formalism derived for bulk MOSFETs, which in turn leads to the unique gms/ID design methodology for DG architectures. © 2004 Elsevier Ltd. All rights reserved.
Type
research article
Web of Science ID
WOS:000226942300029
Authors
Publication date
2005
Published in
Volume
49
Issue
3
Start page
485
End page
489
Peer reviewed
REVIEWED
Available on Infoscience
May 16, 2007
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