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research article
Compact Modeling of Thermal Noise in the MOS Transistor
Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of carrier heating, incorrect modeling of velocity saturation effect, wrong modeling of diffusivity, etc.). This brief presents a new, completely analytical thermal noise model based on consistent physical assumptions. © 2005 IEEE.
Type
research article
Web of Science ID
WOS:000227748500024
Authors
Publication date
2005
Published in
Volume
52
Issue
4
Start page
611
End page
614
Peer reviewed
REVIEWED
Available on Infoscience
May 16, 2007
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