Polarization effects in the channel of an organic field-effect transistor

We present the results of our calculation of the effects of dynamical coupling of a charge carrier to the electronic polarization and the field-induced lattice displacements at the gate interface of an organic field-effect transistor (OFET). We find that these interactions reduce the effective bandwidth of the charge carrier in the quasi-two-dimensional channel of a pentacene transistor by a factor of 2 from its bulk value when the gate is a high-permittivity dielectric such as (Ta<sub>2</sub>O<sub>5</sub>), while this reduction essentially vanishes using a polymer gate insulator. These results point to carrier effective bandwidth as a possible trigger of the dielectric effects on the mobility reported recently in OFETs. &copy; 2006 American Institute of Physics.


Publié dans:
Journal of Applied Physics, 100, 2, 023702
Année
2006
Publisher:
Melville, NY 11747-4502, United States, American Institute of Physics Inc.
ISSN:
0021-8979
Mots-clefs:
Note:
063210058572
Autres identifiants:
Laboratoires:




 Notice créée le 2007-04-03, modifiée le 2020-07-30


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