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research article

Polarization effects in the channel of an organic field-effect transistor

Houili, H.  
•
Picon, J. D.  
•
Zuppiroli, L.  
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2006
Journal of Applied Physics

We present the results of our calculation of the effects of dynamical coupling of a charge carrier to the electronic polarization and the field-induced lattice displacements at the gate interface of an organic field-effect transistor (OFET). We find that these interactions reduce the effective bandwidth of the charge carrier in the quasi-two-dimensional channel of a pentacene transistor by a factor of 2 from its bulk value when the gate is a high-permittivity dielectric such as (Ta2O5), while this reduction essentially vanishes using a polymer gate insulator. These results point to carrier effective bandwidth as a possible trigger of the dielectric effects on the mobility reported recently in OFETs. © 2006 American Institute of Physics.

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Type
research article
DOI
10.1063/1.2214363
Web of Science ID

WOS:000239423400066

Author(s)
Houili, H.  
Picon, J. D.  
Zuppiroli, L.  
Bussac, M. N.  
Date Issued

2006

Publisher

American Institute of Physics Inc.

Published in
Journal of Applied Physics
Volume

100

Issue

2

Article Number

023702

Subjects

Field effect transistors

•

Charge carriers

•

Coupled circuits

•

Bandwidth

•

Dielectric materials

•

Electric insulators

•

Polarization

•

Organic field-effect transistor (OFET)

•

Polymer gate insulator

•

High-permittivity dielectric

Note

063210058572

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOMM  
Available on Infoscience
April 3, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/4282
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