Polarization effects in the channel of an organic field-effect transistor

We present the results of our calculation of the effects of dynamical coupling of a charge carrier to the electronic polarization and the field-induced lattice displacements at the gate interface of an organic field-effect transistor (OFET). We find that these interactions reduce the effective bandwidth of the charge carrier in the quasi-two-dimensional channel of a pentacene transistor by a factor of 2 from its bulk value when the gate is a high-permittivity dielectric such as (Ta<sub>2</sub>O<sub>5</sub>), while this reduction essentially vanishes using a polymer gate insulator. These results point to carrier effective bandwidth as a possible trigger of the dielectric effects on the mobility reported recently in OFETs. &copy; 2006 American Institute of Physics.


Published in:
Journal of Applied Physics, 100, 2, 023702
Year:
2006
Publisher:
American Institute of Physics Inc., Melville, NY 11747-4502, United States
Keywords:
Note:
Compilation and indexing terms, Copyright 2006 Elsevier Inc. All rights reserved
063210058572
0021-8979
Organic field-effect transistor (OFET)
Polymer gate insulator
High-permittivity dielectric
Other identifiers:
Laboratories:




 Record created 2007-04-03, last modified 2018-01-27


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