Window-type tunnel devices on YBa2Cu3O7-x thin films

The authors present the first YBa2Cu3O7-x-Pb tunnelling measurements using window-type tunnel devices. YBa2Cu3O7-x (YBCO) thin films are grown in-situ by dual Ar+ ion beam sputtering. Tunnel barriers are formed on a chemically etched YBCO surface. Tunnelling dV/dI(V) characteristics show reproducible weak gap-like structure 4.4±0.4 meV and 22±2 meV, the latter giving a 2Δ/kBTc value of about 6.5


Published in:
Superconductor Science & Technology, 4, 1S, S136-S138
Presented at:
LT-19 Satellite Conference on High Temperature Superconductivity, Cambridge, UK, 13-15 Aug. 1990
Year:
1991
Laboratories:




 Record created 2007-03-19, last modified 2018-03-17


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