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research article
Effect of growth interruptions on ultra thin InAs/InP quantum grown by chemical beam epitaxy
We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWS) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As, annealing of the QW. Their formation is characterized by a two- to three-dimensional transition of the reflection high energy electron diffraction (RHEED) pattern and by multiple-line photoluminescence spectra. This interpretation of the data is confirmed by transmission electron microscopy (TEM).
Type
research article
Web of Science ID
WOS:A1992HW83500025
Authors
Publication date
1992
Published in
Volume
120
Issue
1-4
Start page
155
End page
156
Subjects
Peer reviewed
REVIEWED
Available on Infoscience
February 15, 2007
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