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research article
Structural Characterization of Short-Period SimGEn Superlattices by Transmission Electron Microscopy and X-Ray Diffraction
1991
High resolution and analytical transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to characterize short-period strained-layer Sim-Gen superlattices ( m monolayers Si, n monolayers Ge, total number of periods N≤ 145, total thickness ≃ 200 nm). The superlattices were grown by low-temperature molecular beam epitaxy (T = 300–400°C) on different SiGe alloy buffer layers on Si (100)substrates. The combination of these two methods shows that detailed informations can be obtained about superlattice periodicity, interface roughness, strain, and average composition.
Type
research article
Authors
Publication date
1991
Published in
Volume
220
Start page
167
End page
173
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
February 15, 2007
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