research article
Growth parameters and shape specific synthesis of silicon nanowires by the VLS method
In this paper the effect of varying temperature, pressure and chemical precursors on the vapour-liquid-solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW morphology by varying the choice of gaseous precursor (silane or dichlorosilane) at elevated temperatures is reported. © 2008 Springer Science+Business Media B.V.
Type
research article
Author(s)
Date Issued
2008
Published in
Volume
10
Start page
1287
End page
1291
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Editorial or Peer reviewed
REVIEWED
Written at
OTHER
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Available on Infoscience
November 14, 2014
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