Growth parameters and shape specific synthesis of silicon nanowires by the VLS method
In this paper the effect of varying temperature, pressure and chemical precursors on the vapour-liquid-solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW morphology by varying the choice of gaseous precursor (silane or dichlorosilane) at elevated temperatures is reported. © 2008 Springer Science+Business Media B.V.
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Latu-Romain, L., Mouchet, C., Cayron, C., Rouviere, E., & Simonato, J.-P. (2008). Growth parameters and shape specific synthesis of silicon nanowires by the VLS method. Journal of Nanoparticle Research, 10, 1287–1291. https://doi.org/10.1007/s11051-007-9350-3
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2008
10
1287
1291
REVIEWED
OTHER