research article

Impact of Size Scaling in Cryogenic InGaAs/InP HEMTs for Low-Noise and High-Frequency Performance

Ferraris, Alberto
•
Cha, Eunjung
•
Olziersky, Antonis
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December 2025
IEEE Transactions on Electron Devices
Type
research article
DOI
10.1109/ted.2025.3630613
Author(s)
Ferraris, Alberto

IBM Research - Zurich

Cha, Eunjung

IBM Research - Zurich

Olziersky, Antonis

IBM Research - Zurich

Sousa, Marilyne

IBM Research - Zurich

Han, Hung-Chi  

École Polytechnique Fédérale de Lausanne

Charbon, Edoardo  

École Polytechnique Fédérale de Lausanne

Moselund, Kirsten E.  

École Polytechnique Fédérale de Lausanne

Zota, Cezar B.

IBM Research - Zurich

Date Issued

2025-12

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Published in
IEEE Transactions on Electron Devices
Volume

72

Issue

12

Start page

7175

End page

7181

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
AQUA  
INPHO  
FunderFunding(s)Grant NumberGrant URL

National Centre of Competence in Research (NCCR) Spin Qubits in Silicon (SPIN) funded by Swiss National Science Foundation

51NF40-180604

SNSF DiracSource

IZKSZ2_218591

Available on Infoscience
December 15, 2025
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/256987