Some substrate materials used in biodegradable and transient electronic systems require semiconductor fabrication routes that avoid high thermal budgets and liquid chemistries. Amorphous indium–gallium–zinc oxide (IGZO) is attractive for such platforms because it can be deposited by sputtering near room temperature. However, conventional patterning of IGZO commonly relies on photolithography and wet etching, which are incompatible with such substrate materials. In this work, we introduce stencil lithography as a dry, resist-free route for patterning IGZO films. Using a SiNₓ-membrane micro-stencil, both direct RF sputtering and stencil-assisted ion-beam etching (IBE) produced 5 μm IGZO features, while IBE achieved 1 μm resolution and steeper sidewalls. Two laser-cut stainless-steel stencils were then used to fabricate Van der Pauw test structures. Four-probe and Hall measurements of these test structures showed linear V-I and VH–B curves, an electron density of 3.5 × 1019 cm−3, and a mobility of 21 cm2V−1 s−1 for a representative patterned film. Increasing the oxygen flow during deposition reduced the carrier density while maintaining the mobility within the range reported for sputtered IGZO. XPS depth profiling showed similar metal-cation compositions across independently prepared films, together with a depth-dependent O 1s bonding gradient across the SiOₓ/IGZO transition. These results indicate that stencil patterning is a practical dry route for IGZO, with potential for transferring the entire process to fragile substrates.