conference paper
Laterally vibrating-body double gate MOSFET with improved signal detection
2008
Device Research Conference, 2008
Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1.25 mum and laterally vibrating MOS transistor structure has two lateral fixed gates separated from the movable transistor body by gaps of 165 nm.
Type
conference paper
Author(s)
Date Issued
2008
Published in
Device Research Conference, 2008
Start page
155
End page
156
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
July 15, 2009
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