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  4. A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling
 
conference paper

A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling

Chauhan, Yogesh
•
Krummenacher, Francois  
•
Gillon, Renuad
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2007
20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07)
20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07)
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Type
conference paper
DOI
10.1109/VLSID.2007.15
Author(s)
Chauhan, Yogesh
Krummenacher, Francois  
Gillon, Renuad
Bakeroot, Benoit
Declercq, Michel  
Ionescu, Adrian  
Date Issued

2007

Publisher

IEEE

Published in
20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07)
Start page

177

End page

182

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
LEG1  
Event nameEvent placeEvent date
20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07)

Bangalore, India

6-10 01 2007

Available on Infoscience
November 8, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/57256
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