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  4. Smart Power IC simulation of substrate coupled current due to majority and minority carriers transports
 
conference paper

Smart Power IC simulation of substrate coupled current due to majority and minority carriers transports

Lo Conte, F.  
•
Sallese, Jean-Michel  
•
Kayal, M.  
2010
2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010

This paper presents a new approach for substrate parasitic current simulation in smart power integrated circuit. A new compact modeling approach developed in previous work has been used to create an equivalent substrate schematic. The latter is composed of new components having the peculiarity not to fully recombine minority carrier at their boundary. By the interconnection of these special components in the electrical design, the effect of substrate current is simulated. Having this information early in the design phase will allow design optimization and reduce the risk of costly chip redesign.

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Type
conference paper
DOI
10.1109/ICICDT.2010.5510261
Author(s)
Lo Conte, F.  
Sallese, Jean-Michel  
Kayal, M.  
Date Issued

2010

Published in
2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010
Start page

168

End page

171

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
GR-KA  
EDLAB  
Available on Infoscience
November 4, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/56666
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