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  4. New evidence for reconstruction at the Si(100)-SiO2 interface from analysis of ion scattering
 
conference paper

New evidence for reconstruction at the Si(100)-SiO2 interface from analysis of ion scattering

Bongiorno, A.
•
Pasquarello, Alfredo  
•
Hybertsen, M. S.
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2003
Physics of Semiconductors 2002 Proceedings of the 26th International Conference, Edinburgh, 29 July to 2 August 2002
Physics of Semiconductors 2002
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Name

ion.pdf

Type

Main Document

Version

Accepted version

Access type

openaccess

License Condition

N/A

Size

317.75 KB

Format

Adobe PDF

Checksum (MD5)

a44faf729d4e6237d996072a8443157d

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