Full C-band tunable integrated Erbium lasers via wafer-scale fabrication
We demonstrate an integrated Erbium-based tunable laser using wafer-scale fabrication and ion implantation of silicon nitride photonic integrated circuits, and achieve single-frequency lasing tunable from 1530 nm to 1575 nm covering the entire optical C-band.
2-s2.0-85215295661
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
Varian Semiconductor Equipment Associates, Inc.
Varian Semiconductor Equipment Associates, Inc.
École Polytechnique Fédérale de Lausanne
2024
9781957171395
REVIEWED
EPFL
| Event name | Event acronym | Event place | Event date |
Charlotte, United States | 2024-05-07 - 2024-05-10 | ||
| Funder | Funding(s) | Grant Number | Grant URL |
EU H2020 research and innovation programme | |||
Defense Advanced Research Projects Agency | |||
EPFL center of MicroNanoTechnology | |||
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