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patent

Double-gate field-effect-transistor based biosensor

Guerin, Hoël  
•
Ionescu, Mihai  
2019

The present invention concerns a biosensor (1) comprising: a source element (13); a drain element (17); a semiconductor channel element between the source element (13) and the drain element (17) for forming an electrically conductive channel with adjustable conductivity between the source and drain elements; a first gate element (3, 5) configured to be electrically biased to set a given operational regime of the sensor (1) with given electrical conductivity of the channel; and a second gate element (7), physically separate from the first gate element (3, 5), configured to be in contact with a solution comprising analytes allowed to interact with a gate contact surface of the second gate element (7) to generate a surface potential change dependent on the concentration of the analytes in the solution. The channel element (21) is substantially fully depleted allowing the first and second gate elements (3, 5, 7) to be electrostatically coupled such that the surface potential change at the second gate element (7) is configured to modify the electrical conductivity of the channel.

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Type
patent
EPO Family ID

59829389

Author(s)
Guerin, Hoël  
•
Ionescu, Mihai  
Note

Alternative title(s) : (fr) Biocapteur à base de transistor à effet de champ à double grille

TTO classification

TTO:6.1769

EPFL units
AVP-R-TTO  
NANOLAB  
DOICountry codeKind codeDate issued

US11467123

US

B2

2022-10-11

US2020284753

US

A1

2020-09-10

EP3679363

EP

A1

2020-07-15

WO2019048059

WO

A1

2019-03-14

Available on Infoscience
December 5, 2019
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/163770
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