A random access memory having a memory array having a plurality of local memory groups, each local memory group including a plurality of bitcells arranged in a bitcell column, a pair of local bitlines operatively connected to the plurality of bitcells, a pair of global read bitlines, a local group read port arranged between the pair of local bitlines and the pair of global read bitlines for selectively accessing one of the local bitlines depending on a state of a selected bitcell, and a local group precharge circuit operatively arranged between the pair of local bitlines.