research article
Magnetic-Properties of the S-Like Bound Hole States in Gaas/Alxga1-Xas Quantum-Wells
1994
We present a combined experimental and theoretical investigation of shallow two-dimensional acceptor states in the presence of an external magnetic field for center-doped GaAs/AlxGa1-xAs quantum wells (QW's). The calculated 1S3/2(GAMMA6)-2S3/2(GAMMA6) transition energies of the acceptor state are in excellent agreement with our resonant Raman-scattering data. The g factors obtained from our calculations for varying well width of QW's are also in good agreement with available experimental data. These results confirm the value of the Luttinger parameter kappa = 1.2+/-0.05 for bulk GaAs.
Type
research article
Author(s)
Zhao, Q. X.
Holtz, P. O.
Monemar, B.
Ferreira, A. C.
Sundaram, M.
Merz, J. L.
Gossard, A. C.
Date Issued
1994
Published in
Volume
49
Issue
15
Start page
10794
End page
10797
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
October 8, 2009
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