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  4. A 512 x 512 SPAD Image Sensor With Integrated Gating for Widefield FLIM
 
research article

A 512 x 512 SPAD Image Sensor With Integrated Gating for Widefield FLIM

Ulku, Arin Can  
•
Bruschini, Claudio  
•
Antolovic, Ivan Michel  
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January 1, 2019
IEEE Journal of Selected Topics in Quantum Electronics

In this paper, we report on SwissSPAD2, an image sensor with 512 x 512 photon-counting pixels, each comprising a single-photon avalanche diode (SPAD), a 1-b memory, and a gating mechanism capable of turning the SPAD ON and OFF, with a skew of 250 and 344 ps, respectively, for a minimum duration of 5.75 ns. The sensor is designed to achieve a frame rate of up to 97 700 binary frames per second and sub-40 ps gate shifts. By synchronizing it with a pulsed laser and using multiple successive overlapping gates, one can reconstruct a molecule's fluorescent response with picosecond temporal resolution. Thanks to the sensor's number of pixels (the largest to date) and the fully integrated gated operation, SwissSPAD2 enables widefield fluorescence lifetime imaging microscopy with an all-solid-state solution and at relatively high frame rates. This was demonstrated with preliminary results on organic dyes and semiconductor quantum dots using both decay fitting and phasor analysis. Furthermore, pixels with an exceptionally low dark count rate and high photon detection probability enable uniform and high-quality imaging of biologically relevant fluorescent samples stained with multiple dyes. While future versions will feature the addition of microlenses and optimize firmware speed, our results open the way for low-cost alternatives to commercially available scientific time-resolved imagers.

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Type
research article
DOI
10.1109/JSTQE.2018.2867439
Web of Science ID

WOS:000454652100001

Author(s)
Ulku, Arin Can  
Bruschini, Claudio  
Antolovic, Ivan Michel  
Kuo, Yung
Ankri, Rinat
Weiss, Shimon
Michalet, Xavier
Charbon, Edoardo  
Date Issued

2019-01-01

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Published in
IEEE Journal of Selected Topics in Quantum Electronics
Volume

25

Issue

1

Article Number

6801212

Subjects

Engineering, Electrical & Electronic

•

Quantum Science & Technology

•

Optics

•

Physics, Applied

•

Engineering

•

Physics

•

cmos

•

image sensor

•

flim

•

fluorescence lifetime imaging microscopy

•

single-photon avalanche diodes

•

spad

•

time gating

•

time-resolved

•

widefield

•

phasor analysis

•

phasor approach

•

fluorescence

•

localization

•

microscopy

•

resolution

•

array

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
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Available on Infoscience
January 23, 2019
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/153923
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