Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Conferences, Workshops, Symposiums, and Seminars
  4. Full wafer integration of NEMS on CMOS by nanostencil lithography
 
conference paper

Full wafer integration of NEMS on CMOS by nanostencil lithography

Arcamone, J.
•
van den Boogaart, M.A.F.  
•
Serra-Graells, F.
Show more
2006
Electron Devices Meeting, 2006. IEDM '06. International
2006 IEEE international Electron Devices, Electron Devices Meeting, Electron Devices Meeting, 2006. IEDM '06. International, December 11-13

Wafer scale nanostencil lithography is used to define 200 nm scale mechanically resonating silicon cantilevers monolithically integrated into CMOS circuits. We demonstrate the simultaneous patterning of ~2000 nanodevices by post-processing standard CMOS wafers using one single metal evaporation, pattern transfer to silicon and subsequent etch of the sacrificial layer. Resonance frequencies around 1.5 MHz were measured in air and vacuum and tuned by applying dc voltages of 10V and 1V respectively.

  • Files
  • Details
  • Metrics
Loading...
Thumbnail Image
Name

Arcamone_ 2006_IEDM.pdf

Access type

openaccess

Size

2.6 MB

Format

Adobe PDF

Checksum (MD5)

7fa64565bea7b1620ae1ec60e36612a9

Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés