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  4. Coulomb blockade in gate-all-around silicon nanowire MOSFETs
 
conference paper

Coulomb blockade in gate-all-around silicon nanowire MOSFETs

Pott, V.  
•
Boucart, J.
•
Bouvet, D.  
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2006
Proceedings of IEEE 2006 silicon nanoelectronics workshop, VLSI 2006 workshop
  • Details
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Type
conference paper
Author(s)
Pott, V.  
Boucart, J.
Bouvet, D.  
Moselund, K. E.  
Ionescu, A. M.  
Date Issued

2006

Published in
Proceedings of IEEE 2006 silicon nanoelectronics workshop, VLSI 2006 workshop
Start page

25

End page

26

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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Available on Infoscience
May 16, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/6992
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