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research article

Evaluation of characteristic parameters for high performance hall cells

Paun, Maria-Alexandra  
•
Sallese, Jean-Michel  
•
Kayal, Maher  
2014
Microelectronics Journal

The current work focuses on presenting specific Hall cells with high performance, and their corresponding parameters. The design, integration, measurements and model development for their performance assessment are necessary stages considered in the generation of the Hall cells. Experimental results regarding the Hall cells absolute sensitivity, offset and offset temperature drift are provided for two particular structures exhibiting the best behavior in terms of maximum sensitivity and lowest offset. Three-dimensional physical simulations were performed for the structures and the Hall mobility was extracted. Representation of the inverse of the geometrical correction factor for the Greek-cross Hall cell is also provided. (C) 2014 Elsevier Ltd. All rights reserved.

  • Details
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Type
research article
DOI
10.1016/j.mejo.2014.04.028
Web of Science ID

WOS:000343642200008

Author(s)
Paun, Maria-Alexandra  
Sallese, Jean-Michel  
Kayal, Maher  
Date Issued

2014

Publisher

Elsevier Sci Ltd

Published in
Microelectronics Journal
Volume

45

Issue

9

Start page

1194

End page

1201

Subjects

Hall cells

•

Three-dimensional physical simulations

•

Hall voltage

•

Absolute sensitivity

•

Offset

•

Temperature effects

•

Hall mobility

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
GR-KA  
EDLAB  
Available on Infoscience
December 30, 2014
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/109593
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