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  4. Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals
 
research article

Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

Matioli, Elison  
•
Brinkley, Stuart
•
Kelchner, Kathryn M.
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2011
Applied Physics Letters

The polarization-preserving property of photonic crystals (PhCs) is combined to the superior extraction efficiency of embedded PhCs to enhance polarized light emission in m-plane GaN light-emitting diodes. As guided modes in m-plane GaN are mostly polarized along the a-direction (Ea), their efficient extraction is achieved by one-dimensional embedded PhCs also aligned to the a-direction. A better diffraction efficiency is obtained by air-gap PhCs which required the growth of high quality, defect-free, m-plane GaN coalesced over the embedded air-grooves. (C) 2011 American Institute of Physics. [doi:10.1063/1.3602319]

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Type
research article
DOI
10.1063/1.3602319
Author(s)
Matioli, Elison  
Brinkley, Stuart
Kelchner, Kathryn M.
Nakamura, Shuji
Denbaars, Steven
Speck, James
Weisbuch, Claude
Date Issued

2011

Publisher

Amer Inst Physics

Published in
Applied Physics Letters
Volume

98

Issue

25

Article Number

251112

Subjects

air gaps

•

gallium compounds

•

III-V semiconductors

•

light emitting diodes

•

light polarisation

•

photonic crystals

•

wide band gap semiconductors

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
POWERLAB  
Available on Infoscience
March 17, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/125006
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