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research article

An EKV-based high voltage MOSFET model with improved mobility and drift model

Chauhan, Y.
•
Gillon, R.
•
Bakeroot, B.
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2007
Solid-State Electronics
  • Details
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Type
research article
DOI
10.1016/j.sse.2007.09.024
Web of Science ID

WOS:000251831200025

Author(s)
Chauhan, Y.
Gillon, R.
Bakeroot, B.
Krummenacher, F.  
Declercq, M.  
Ionescu, A.  
Date Issued

2007

Publisher

Elsevier

Published in
Solid-State Electronics
Volume

51

Issue

11-12

Start page

1581

End page

1588

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
LEG1  
GR-KA  
Available on Infoscience
November 8, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/57265
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